Arduino Hands-On: Exploring the Hall Magnetic Sensor Module
'Arduino Hands-On: Exploring the Hall Magnetic Sensor Module'Bold text Experiment: Linear Hall Magnetic Force Sensor Module Hall Effect The Hall effect is an electromagnetic phenomenon that occurs when a magnetic field influences the current-carrying carriers in metal conductors or semiconductors, resulting in a transverse electric potential difference. This effect was discovered in metals by the American physicist Edwin Hall in 1879. When an electric current flows through a metal foil and a magnetic field is applied perpendicular to the current's direction, a transverse voltage appears across the sides of the foil. The Hall effect is more pronounced in semiconductors compared to metal foils, and ferromagnetic metals exhibit a strong Hall effect below their Curie temperature. The direction of the Hall effect can be determined using the left-hand rule. Working Principle of Hall Element The Hall effect can be utilized to design a variety of sensors. The fundamental relationship for the Hall voltage UH is:
UH = RHIB/d (1)
RH = 1/nq (metal) (2)
Here, ( R_H ) is the Hall coefficient, ( n ) is the number of charge carriers (or free electrons) per unit volume, ( q ) is the electron charge, ( I ) is the current, ( B ) is the magnetic induction perpendicular to ( I ), and ( d ) is the thickness of the conductor.
In semiconductors and ferromagnetic metals, the Hall coefficient formula differs from equation (2). The magnetic field around a current-carrying conductor is proportional to the current, allowing Hall elements to measure the field and determine the current's magnitude. Hall current sensors leverage this principle and offer benefits like no direct electrical contact, no interference, and no power consumption from the measured circuit, making them ideal for high-current measurements. If a Hall element is placed in an electromagnetic field with electric field intensity E and magnetic field intensity H, a current I will be generated within the element. The Hall voltage and the electric field intensity E produced simultaneously on the element are directly proportional. By measuring the magnetic field intensity of this electromagnetic field, the instantaneous power density P of the electromagnetic field can be determined by P = EH.
This approach can be used to develop Hall power sensors. By strategically placing Hall elements with integrated switches on an object, pulse signals can be detected as a permanent magnet attached to a moving object passes by. Analyzing these pulse signals allows for determining the displacement of the moving object. Furthermore, the speed of motion can be calculated by measuring the number of pulses generated per unit of time. Working Principle of Hall Element The Hall effect can be utilized to design a variety of sensors. The fundamental relationship for the Hall voltage UH is:
UH = RHIB/d (1)
RH = 1/nq (metal) (2)
Here, ( R_H ) is the Hall coefficient, ( n ) is the number of charge carriers (or free electrons) per unit volume, ( q ) is the electron charge, ( I ) is the current, ( B ) is the magnetic induction perpendicular to ( I ), and ( d ) is the thickness of the conductor.
In semiconductors and ferromagnetic metals, the Hall coefficient formula differs from equation (2). The magnetic field around a current-carrying conductor is proportional to the current, allowing Hall elements to measure the field and determine the current's magnitude. Hall current sensors leverage this principle and offer benefits like no direct electrical contact, no interference, and no power consumption from the measured circuit, making them ideal for high-current measurements. If a Hall element is placed in an electromagnetic field with electric field intensity E and magnetic field intensity H, a current I will be generated within the element. The Hall voltage and the electric field intensity E produced simultaneously on the element are directly proportional. By measuring the magnetic field intensity of this electromagnetic field, the instantaneous power density P of the electromagnetic field can be determined by P = EH.
This approach can be used to develop Hall power sensors. By strategically placing Hall elements with integrated switches on an object, pulse signals can be detected as a permanent magnet attached to a moving object passes by. Analyzing these pulse signals allows for determining the displacement of the moving object. Furthermore, the speed of motion can be calculated by measuring the number of pulses generated per unit of time. Main chips: LM393, 3144 Hall sensor magnetic induction probe Operating voltage: DC 5 volts Module Interface Description
Connect GND to the negative terminal of the power supply (marked as -). Connect VCC to the positive terminal of the power supply, 3.3-5V. DO outputs TTL switch signal (marked as S). Generally, AO pin is not used.
Equipped with signal output indication With installation holes for easy mounting Output effective signal is low level Sensitivity adjustable (fine-tuning) High sensitivity to magnetic field induction detection Circuit board outputs switch quantity, directly connectable to microcontroller IO port Suitable for occasions such as motor speed measurement and position detection
The linear Hall magnetic module with a digital 13 interface comes with an LED. Build a simple circuit to create a magnetic field indicator light.
Connect the linear Hall magnetic sensor to digital interface 3 and use the built-in LED on digital pin 13. When the sensor detects a magnetic field, both the module's indicator light and the UNO board's onboard LED will illuminate for 0.5 seconds; otherwise, they will remain off. Tag：Hall Magnetic Sensor Module; LM393; Electronic components
